Thermomechanical strain measurements by synchrotron x-ray diffraction and data interpretation for through-silicon vias

被引：24

作者：

Liu, X. ^{[1
]}

Thadesar, P. A. ^{[2
]}

Taylor, C. L. ^{[1
]}

Kunz, M. ^{[3
]}

Tamura, N. ^{[3
]}

Bakir, M. S. ^{[2
]}

Sitaraman, S. K. ^{[1
]}

机构：

[1] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 02期

关键词：

MICRODIFFRACTION; CU;

D O I：

10.1063/1.4813742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To study thermomechanical strain induced by the mismatch of coefficients of thermal expansion in through-silicon vias (TSVs) and thus provide fundamental understanding of TSV reliability, strain measurements have been performed with synchrotron x-ray diffraction (XRD). The measured strains are available as two-dimensional (2D) distribution maps, whereas the strain distributions in TSVs are three-dimensional (3D) in nature. To understand this 3D to 2D data projection process, a data interpretation method based on beam intensity averaging is proposed and validated with measurements. The proposed method is applicable to XRD strain measurements on thin as well as thick samples. (C) 2013 AIP Publishing LLC.

引用

页数：5

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