Optical second-harmonic generation in thin film systems

被引:41
作者
Gielis, J. J. H. [1 ]
Gevers, P. M. [1 ]
Aarts, I. M. P. [1 ]
van de Sanden, M. C. M. [1 ]
Kessels, W. M. M. [1 ]
机构
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2008年 / 26卷 / 06期
关键词
aluminium compounds; amorphous semiconductors; atomic layer deposition; chemical vapour deposition; elemental semiconductors; etching; interface phenomena; multilayers; optical harmonic generation; plasma materials processing; semiconductor thin films; silicon; silicon compounds;
D O I
10.1116/1.2990854
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The surface and interface sensitive nonlinear optical technique of second-harmonic generation (SHG) is a very useful diagnostic in studying surface and interface properties in thin film systems and can provide relevant information during thin film processing. An important aspect when applying SHG is the interpretation of the SHG response. In order to utilize the full potential of SHG during materials processing it is necessary to have a good understanding of both the macroscopic and the microscopic origin of the SHG response, particularly in thin film or multilayer systems where the propagation of radiation is another important aspect that should be considered carefully. A brief theoretical overview on the origin of the SHG response and a description of the propagation of radiation will be given. Furthermore, several methods will be discussed that might reveal the possible macroscopic and microscopic origins of the SHG response in thin film systems. The different approaches will be illustrated by examples of real-time and spectroscopic SHG experiments with thin film systems relevant in Si etching and deposition environments, such as (1) hydrogenated amorphous Si films deposited by hot-wire chemical vapor deposition on both Si(100) and fused silica substrates, (2) amorphous Si generated by low-energy Ar+-ion bombardment of H terminated Si(100), and (3) Al2O3 films deposited by plasma-assisted atomic layer deposition on H terminated Si(100).
引用
收藏
页码:1519 / 1537
页数:19
相关论文
共 75 条
[1]   Probing hydrogenated amorphous silicon surface states by spectroscopic and real-time second-harmonic generation [J].
Aarts, IMP ;
Gielis, JJH ;
van de Sanden, MCM ;
Kessels, WMM .
PHYSICAL REVIEW B, 2006, 73 (04)
[2]   Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy [J].
Aarts, IMP ;
Hoex, B ;
Smets, AHM ;
Engeln, R ;
Kessels, WMM ;
van de Sanden, MCM .
APPLIED PHYSICS LETTERS, 2004, 84 (16) :3079-3081
[3]   Application of the anisotropic bond model to second-harmonic generation from amorphous media [J].
Adles, E. J. ;
Aspnes, D. E. .
PHYSICAL REVIEW B, 2008, 77 (16)
[4]   dc-electric-field-induced second-harmonic generation in Si(111)-SiO2-Cr metal-oxide-semiconductor structures [J].
Aktsipetrov, OA ;
Fedyanin, AA ;
Mishina, ED ;
Rubtsov, AN ;
vanHasselt, CW ;
Devillers, MAC ;
Rasing, T .
PHYSICAL REVIEW B, 1996, 54 (03) :1825-1832
[5]   Second harmonic generation in hydrogenated amorphous silicon [J].
Alexandrova, S ;
Danesh, P ;
Maslyanitsyn, IA .
PHYSICAL REVIEW B, 2000, 61 (16) :11136-11138
[6]   Absolute phase and amplitude of second-order nonlinear optical susceptibility components at Si(001) interfaces [J].
An, Y. Q. ;
Carriles, R. ;
Downer, M. C. .
PHYSICAL REVIEW B, 2007, 75 (24)
[7]   Electron photoinjection from silicon to ultrathin SiO2 films via ambient oxygen [J].
Bloch, J ;
Mihaychuk, JG ;
vanDriel, HM .
PHYSICAL REVIEW LETTERS, 1996, 77 (05) :920-923
[8]   OPTICAL SECOND-HARMONIC GENERATION IN REFLECTION FROM MEDIA WITH INVERSION SYMMETRY [J].
BLOEMBERGEN, N ;
CHANG, RK ;
JHA, SS ;
LEE, CH .
PHYSICAL REVIEW, 1968, 174 (03) :813-+
[9]  
Born M, 2005, Principles of optics
[10]   Second-harmonic generation from Si/SiO2/Hf(1-x)SixO2 structures [J].
Carriles, R ;
Kwon, J ;
An, YQ ;
Miller, JC ;
Downer, MC ;
Price, J ;
Diebold, AC .
APPLIED PHYSICS LETTERS, 2006, 88 (16)