Performance optimization techniques for the front and back of nanostructured 'black silicon' solar cells

被引：0

作者：

Duan, Wenqi ^{[1
]}

Gao, Bingtao ^{[1
]}

Haque, K. A. S. M. Ehteshamul ^{[1
]}

Toor, Fatima ^{[1
]}

机构：

[1] Univ Iowa, Elect & Comp Engn Dept, Iowa City, IA 52242 USA

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

关键词：

silicon; photovoltaic cells; metal assisted chemical etching; high efficiency; back surface field; SURFACE FIELD;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

In this work we present techniques to improve the front and back surface performance of nanostructured black silicon (bSi) solar cells. Proximity doping using ammonium dihydrogen phosphate (ADP) is used to reduce the physical impact on the nanostructure of bSi during fabrication. Potassium hydroxide (KOH) is used to etch off the highly doped region of the front emitter. Forming gas anneal (FGA) is employed to reduce the series resistance and enhance surface passivation, improving cell efficiency by over 31%. The back-surface-field (BSF) formed by sputtered aluminum (Al) is optimized to reduce backside recombination rate, improving external quantum efficiency (EQE) by an average of 8.31% in the long wavelength region.

引用

页码：3080 / 3085

页数：6

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