Electric field and uniaxial strain tunable electronic properties of the InSb/InSe heterostructure

In this study, the InSb/InSe heterostructure is systematically examined in terms of its electronic properties through first-principles calculations. According to our findings, the InSb/InSe heterostructure is a kind of unique direct band gap semiconductor, which has inherent type-II band alignment, resulting in significant photogenerated electron-hole pair separation in space. When the external electric field is applied, the Stark effect is observed in the band gap. Interestingly, in the application of the -0.3 V angstrom(-1)electric field, such a heterostructure is transformed into type-I from type-II. Simultaneously, the band gap is also effectively controlled by uniaxial strain. In particular, high carrier mobility is obtained at a compressive strain of 4% on theY-axis. To sum up, based on the results in the present work, the InSb/InSe heterostructure can be potentially used in nanoelectronic and optoelectronic devices.