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Temperature stability and electrical properties of Tm2O3 doped KNN-based ceramics
被引:16
|作者:
Zhai, Yuzhi
[1
]
Du, Juan
[1
]
Chen, Chong
[1
]
Hao, Jigong
[1
]
Fu, Peng
[1
]
Li, Wei
[1
]
Xu, Zhijun
[2
]
机构:
[1] Liaocheng Univ, Sch Mat Sci & Engn, Liaocheng 252059, Peoples R China
[2] Yantai Univ, Sch Environm & Mat Engn, Yantai 264005, Peoples R China
基金:
国家重点研发计划;
关键词:
PIEZOELECTRIC PROPERTIES;
PIEZOCERAMICS;
PERFORMANCE;
D(33);
D O I:
10.1007/s10854-019-00765-8
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
For green development concern, lead-free piezoelectric ceramics 0.96(K0.48Na0.52)Nb0.96Sb0.04O3-0.04Bi(0.5)(Na0.82K0.18)(0.5)ZrO3-xmol%Tm2O3 fabricated via conventional solid state method are studied. The analyses of X-ray diffraction and Raman dates show the coexistence phase of orthorhombic-tetragonal. Meanwhile, the tetragonal fraction increases with increasing Tm contents. Both the Cure temperature and the responding maximum permittivity decline with increasing x. At the same time, there are diffuse phase transition and relaxation-like phenomena after doping Tm. The activation energy, obtained from Arrhenius equation, suggests that there is a mixed conduction mechanism by both single-ionized and doubly oxygen vacancy diffusion. The temperature stabilities of remnant polarization and unipolar strain are significantly improved in the temperature range of 30-150 degrees C. Rare earth element Tm is useful for improving the temperature stability of the KNN-based piezoelectric ceramics.
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页码:4716 / 4725
页数:10
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