Preparation and properties of n-ZnS film /p-Si heterojunction

被引：5
作者：
Huang, Jian [1 ]
Wang, Linjun [1 ]
Tang, Ke [1 ]
Zhang, Jijun [1 ]
Xu, Run [1 ]
Xia, Yiben [1 ]
Lu, Xionggang [1 ]
机构：
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
来源：
ADVANCED MATERIALS AND PROCESSES, PTS 1-3 | 2011年 / 311-313卷
关键词：
ZnS; magnetron sputtering; heterojunction; THIN-FILMS; GROWTH;
D O I：
10.4028/www.scientific.net/AMR.311-313.1277
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnS films were prepared on silicon (Si) and glass substrates by radio-frequency (RF) magnetron sputtering method. The effect of annealing treatment on the structural and optical properties of ZnS films was studied. The results showed that annealing treatment was helpful in improving the crystalline quality of the ZnS films, and the bandgap was about 3.61eV and 3.49eV for films with and without annealing, respectively. A ZnS/ Si heterojunction diode was fabricated successfully by depositing ZnS films on p-type single-crystalline Si substrates. The electrical and optical property of the device was reported.
引用
收藏
页码：1277 / 1280
页数：4
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