Silicon field emitter arrays produced via wafer dicing

被引:0
作者
Kusch, Alexander [1 ]
Wurz, Marc [1 ]
Bunert, Erik [2 ]
Zimmermann, Stefan [2 ]
机构
[1] Leibniz Univ Hannover, Inst Micro Prod Technol, Hannover, Germany
[2] Leibniz Univ Hannover, Inst Elect Engn & Measurement Technol, Hannover, Germany
来源
2017 30TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2017年
关键词
field emitter; dicing; silicon; emission; chipping;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, a p-Si field emitter array produced by wafer dicing is presented. Different strategies to produce a variety of shapes of the tips are shown. The resulting arrays show excellent emission characteristics compared to other field emitter, like carbon nano tubes.
引用
收藏
页码:132 / 133
页数:2
相关论文
共 3 条
[1]  
Clark L. R., 2001, AREA ARRAY INTERCONN, P201
[2]  
Cvetkovic S., 2009, P ASPE 24 ANN M 2009, P431
[3]  
Rissing L., 2017, DE Patent, Patent No. [10 2015 118 805 A1, 102015118805]