On the kinetics of generation of point defects in the Si-SiO2 system

The results of the studies of the point defect generation kinetics in the Si-SiO2 system by means of electron spin resonance (ESR) and nuclear magnetic resonance (NMR) are presented. It has been established that the ESR and NMR signal intensities change non-monotonously with oxide film thickness and the maximum of the ESR and minimum of the NMR signals occur at the same oxidation time. The influence of the thermal treatment on the ESR and NMR signals depends on the oxide thickness and annealing time that indicates the influence of internal mechanical stresses and interaction between point defects and impurities on the point defect generation kinetics. (C) 1999 Elsevier Science S.A. All rights reserved.