Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide

被引：38

作者：

Rambach, M. ^{[2
]}

Bauer, A. J. ^{[1
]}

Ryssel, H. ^{[1
,2
]}

机构：

[1] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Chair Electron Devices, D-91058 Erlangen, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2008年 / 245卷 / 07期

关键词：

D O I：

10.1002/pssb.200743510

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electrical parameters and surface topography of aluminum (Al) implanted layers in 4H silicon carbide (SiC) are analyzed. The implantation is conducted for temperatures from room temperature up to 1000 degrees C. The impact of the post implantation annealing step on the Al implanted layers is investigated for two different annealing systems, a furnace system and a lamp system. The implanted layers are characterized in detail by atomic force microscopy and resistivity measurements. A model based on resistivity data is developed for the determination of activation and compensation and is discussed in order to get a better insight into the influence of the annealing step on the electrical parameters (e.g., hole mobility). In particular, the effect of elevated implantation temperatures on resistivity is identified. Additionally, the surface topography is examined regarding the annealing gas atmosphere. For that, a silicon carbide coated graphite crucible is used to achieve a silicon overpressure during annealing. The effectiveness of this crucible is identified by modeling. Measurements confirm the modeling results, that such a crucible prevents surface degradation only in the lamp system with heating rates of several 1000 K/min, and not in the furnace with heating rates in the range of some 10 K/min. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1315 / 1326

页数：12

共 47 条

[1] The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H-SiC [J].

Anwand, W ;

Brauer, G ;

Wirth, H ;

Skorupa, W ;

Coleman, PG .

APPLIED SURFACE SCIENCE, 2002, 194 (1-4) :127-130

[2]

Bahng W, 2002, MATER SCI FORUM, V433-4, P617, DOI 10.4028/www.scientific.net/MSF.433-436.617

[3] Activation of aluminum implanted at high doses in 4H-SiC [J].

Bluet, JM ;

Pernot, J ;

Camassel, J ;

Contreras, S ;

Robert, JL ;

Michaud, JF ;

Billon, T .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) :1971-1977

[4] Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy -: art. no. 023523 [J].

Brauer, G ;

Anwand, W ;

Skorupa, W ;

Brandstetter, S ;

Teichert, C .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (02) :1-8

[5] Surface roughening in ion implanted 4H-silicon carbide [J].

Capano, MA ;

Ryu, S ;

Cooper, JA ;

Melloch, MR ;

Rottner, K ;

Karlsson, S ;

Nordell, N ;

Powell, A ;

Walker, DE .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (03) :214-218

[6] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].

CAUGHEY, DM ;

THOMAS, RE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+

[7] Status and prospects for SiC power MOSFETs [J].

Cooper, JA ;

Melloch, MR ;

Singh, R ;

Agarwal, A ;

Palmour, JW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (04) :658-664

[8] IMPURITY BAND-STRUCTURE IN LIGHTLY DOPED SEMICONDUCTORS [J].

EFROS, AL ;

VANLIEN, N ;

SHKLOVSKII, BI .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (10) :1869-1881

[9] IMPURITY CONDUCTIVITY IN LOW COMPENSATED SEMICONDUCTORS [J].

EFROS, AL ;

SHKLOVSKII, BI ;

YANCHEV, IY .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 50 (01) :45-+

[10] Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC [J].

Giannazzo, F. ;

Roccaforte, F. ;

Raineri, V. .

APPLIED PHYSICS LETTERS, 2007, 91 (20)

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