Intrinsic electrical properties of Au/SrTiO3 Schottky junctions

被引：100

作者：

Shimizu, T ^{[1
]}

Okushi, H ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 10期

关键词：

D O I：

10.1063/1.370539

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intrinsic electrical properties of Au/Nb-doped SrTiO3(001) (STO:Nb) Schottky junctions, fabricated using a proper surface treatment of the STO:Nb and in situ deposition of Au, were investigated in detail. Current-voltage characteristics and photocurrent-wavelength characteristics have shown a temperature-dependent and voltage-dependent Schottky barrier height, while capacitance-voltage characteristics have shown a temperature-independent flat band voltage. Using a temperature-dependent and field-dependent permittivity of the STO in the framework of Devonshire theory, we have performed computer simulation of the Schottky barrier potential to analyze the electrical properties of the junction. It is found that an intrinsic low permittivity layer at the Au/STO:Nb interface explains all the temperature dependence of the electrical properties. (C) 1999 American Institute of Physics. [S0021-8979(99)01510-8].

引用

页码：7244 / 7251

页数：8

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