Lattice Deformation in a-Plane ZnO Films Grown on r-Plane Al2O3 Substrates Grown by Plasma-Assisted Molecular-Beam Epitaxy

被引：4

作者：

Han, Seok-Kyu ^{[2
]}

Oh, Dong-Cheol ^{[1
]}

Song, Jung-Hoon ^{[3
]}

Inaba, Katsuhiko ^{[4
]}

Yao, Takafumi ^{[5
]}

Hong, Soon-Ku ^{[2
,6
]}

机构：

[1] Hoseo Univ, Dept Def Sci & Technol, Ctr Optoelect Mat & Devices, Asan 336795, Chungnam, South Korea

[2] Chungnam Natl Univ, Dept Adv Mat Engn, Taejon 305764, South Korea

[3] Kongju Natl Univ, Dept Phys, Kong Ju 314701, Chungnam, South Korea

[4] Rigaku Corp, Xray Res Lab, Akishima, Tokyo 1968666, Japan

[5] Tohoku Univ, Ctr Interdisciplinary Res, Sendai, Miyagi 9808578, Japan

[6] Chungnam Natl Univ, Grad Sch Green Energy Technol, Taejon 305764, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

THIN-FILMS; POLARIZATION;

D O I：

10.1143/APEX.5.081101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice deformation of a-ZnO films on r-plane Al2O3 substrates, grown by plasma-assisted molecular-beam epitaxy (PAMBE), is strongly dependent on growth temperature: i) the unit cell volume is smaller than that of a reference ZnO bulk and it increases with the increase in growth temperature; ii) a-plane lattice constants decrease and c-plane lattice constants increase with the increase in growth temperature; and iii) residual strain decreases with the increase in growth temperature, irrespective of the direction of a-, m-, and c-axes. It is proposed that the ZnO lattices in the a-ZnO/r-Al2O3 system are individually relaxed along in-plane axes by releasing the residual strain in terms of compensating thermal mismatch. (c) 2012 The Japan Society of Applied Physics

引用

页数：3

共 18 条

[11]

Inaba K., 2008, The Rigaku Journal, V24, P10

[12] Growth and structural analysis of metalorganic chemical vapor deposited (11(2)over-bar0) MgxZn1-xO (0<x<0.33) films on (01(1)over-bar2) R-plane Al2O3 substrates [J].

Muthukumar, S ;

Zhong, J ;

Chen, Y ;

Lu, Y ;

Siegrist, T .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :742-744

[13] Development and prospects of nitride materials and devices with nonpolar surfaces [J].

Paskova, Tanya .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (06) :1011-1025

[14] In-plane anisotropic strain in a-ZnO films grown on r-sapphire substrates [J].

Saraf, G. ;

Lu, Y. ;

Siegrist, T. .

APPLIED PHYSICS LETTERS, 2008, 93 (04)

[15] SUBSTRATE-ORIENTATION DEPENDENCE OF GAN SINGLE-CRYSTAL FILMS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

SASAKI, T ;

ZEMBUTSU, S .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2533-2540

[16] Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy [J].

Smorchkova, IP ;

Elsass, CR ;

Ibbetson, JP ;

Vetury, R ;

Heying, B ;

Fini, P ;

Haus, E ;

DenBaars, SP ;

Speck, JS ;

Mishra, UK .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4520-4526

[17] Optical absorption edge of ZnO thin films: The effect of substrate [J].

Srikant, V ;

Clarke, DR .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :6357-6364

[18] Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates [J].

Wietler, Tobias F. ;

Bugiel, Eberhard ;

Hofmann, Karl R. .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (4-5) :659-663

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