Lattice Deformation in a-Plane ZnO Films Grown on r-Plane Al2O3 Substrates Grown by Plasma-Assisted Molecular-Beam Epitaxy

被引：4

作者：

Han, Seok-Kyu ^{[2
]}

Oh, Dong-Cheol ^{[1
]}

Song, Jung-Hoon ^{[3
]}

Inaba, Katsuhiko ^{[4
]}

Yao, Takafumi ^{[5
]}

Hong, Soon-Ku ^{[2
,6
]}

机构：

[1] Hoseo Univ, Dept Def Sci & Technol, Ctr Optoelect Mat & Devices, Asan 336795, Chungnam, South Korea

[2] Chungnam Natl Univ, Dept Adv Mat Engn, Taejon 305764, South Korea

[3] Kongju Natl Univ, Dept Phys, Kong Ju 314701, Chungnam, South Korea

[4] Rigaku Corp, Xray Res Lab, Akishima, Tokyo 1968666, Japan

[5] Tohoku Univ, Ctr Interdisciplinary Res, Sendai, Miyagi 9808578, Japan

[6] Chungnam Natl Univ, Grad Sch Green Energy Technol, Taejon 305764, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

THIN-FILMS; POLARIZATION;

D O I：

10.1143/APEX.5.081101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice deformation of a-ZnO films on r-plane Al2O3 substrates, grown by plasma-assisted molecular-beam epitaxy (PAMBE), is strongly dependent on growth temperature: i) the unit cell volume is smaller than that of a reference ZnO bulk and it increases with the increase in growth temperature; ii) a-plane lattice constants decrease and c-plane lattice constants increase with the increase in growth temperature; and iii) residual strain decreases with the increase in growth temperature, irrespective of the direction of a-, m-, and c-axes. It is proposed that the ZnO lattices in the a-ZnO/r-Al2O3 system are individually relaxed along in-plane axes by releasing the residual strain in terms of compensating thermal mismatch. (c) 2012 The Japan Society of Applied Physics

引用

页数：3

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