Optical nonlinearity in low-temperature-grown GaAs: Microscopic limitations and optimization strategies

被引：57

作者：

Haiml, M ^{[1
]}

Siegner, U

Morier-Genoud, F

Keller, U

Luysberg, M

Lutz, RC

Specht, P

Weber, ER

机构：

[1] ETH Honggerberg HPT, Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland

[2] Forschungszentrum Julich, Inst Solid State Res, D-52425 Julich, Germany

[3] Univ Calif Berkeley, Dept Mat Sci & Mineral Engn, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 21期

关键词：

D O I：

10.1063/1.124086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have quantitatively measured the linear and the nonsaturable absorption as well as the absorption modulation and its recovery time in as-grown and annealed low-temperature (LT) GaAs. Correlation of the optical data with As antisite (As(Ga)) defect densities yields the absorption cross section and the saturation parameter of the dominant As(Ga) to the conduction-band defect transition. We show that this defect transition is mainly responsible for the large nonsaturable absorption in as-grown LT GaAs with fast recovery times. Reducing the As(Ga) density by annealing yields an optimized material with small nonsaturable absorption, high absorption modulation, and fast recovery times. (C) 1999 American Institute of Physics. [S0003-6951(99)03721-3].

引用

页码：3134 / 3136

页数：3

共 23 条

[1] SELF-PHASE MODULATION AND SPECTRAL BROADENING OF OPTICAL PULSES IN SEMICONDUCTOR-LASER AMPLIFIERS [J].

AGRAWAL, GP ;

OLSSON, NA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (11) :2297-2306

[2] DESIGN AND OPERATION OF ANTIRESONANT FABRY-PEROT SATURABLE SEMICONDUCTOR ABSORBERS FOR MODE-LOCKED SOLID-STATE LASERS [J].

BROVELLI, LR ;

KELLER, U ;

CHIN, TH .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1995, 12 (02) :311-322

[3] Above band gap absorption spectra of the arsenic antisite defect in low temperature grown GaAs and AlGaAs [J].

Dankowski, SU ;

Streb, D ;

Ruff, M ;

Kiesel, P ;

Kneissl, M ;

Knupfer, B ;

Dohler, GH ;

Keil, UD ;

Sorenson, CB ;

Verman, AK .

APPLIED PHYSICS LETTERS, 1996, 68 (01) :37-39

[4] SUBPICOSECOND CARRIER LIFETIME IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].

GUPTA, S ;

FRANKEL, MY ;

VALDMANIS, JA ;

WHITAKER, JF ;

MOUROU, GA ;

SMITH, FW ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1991, 59 (25) :3276-3278

[5] Femtosecond response times and high optical nonlinearity in beryllium-doped low-temperature grown GaAs [J].

Haiml, M ;

Siegner, U ;

Morier-Genoud, F ;

Keller, U ;

Luysberg, M ;

Specht, P ;

Weber, ER .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1269-1271

[6] Ultrafast carrier trapping in oxygen-doped metal-organic vapor phase epitaxy GaAs [J].

Kang, JU ;

Frankel, MY ;

Huang, JW ;

Kuech, TF .

APPLIED PHYSICS LETTERS, 1997, 70 (12) :1560-1562

[7]

KELLER U, 1996, IEEE J SEL TOP QUANT, V2, P436

[8] ELECTRICAL SPECTROSCOPY OF GAAS WITH INTRINSIC ILLUMINATION - THE OPTICAL RECOVERY OF EL2 [J].

KHACHATURYAN, K ;

WEBER, ER ;

HORIGAN, J .

PHYSICAL REVIEW B, 1992, 46 (03) :1365-1371

[9] ROOM-TEMPERATURE OPTICAL NONLINEARITIES IN GAAS [J].

LEE, YH ;

CHAVEZPIRSON, A ;

KOCH, SW ;

GIBBS, HM ;

PARK, SH ;

MORHANGE, J ;

JEFFERY, A ;

PEYGHAMBARIAN, N ;

BANYAI, L ;

GOSSARD, AC ;

WIEGMANN, W .

PHYSICAL REVIEW LETTERS, 1986, 57 (19) :2446-2449

[10]

LILIENTALWEBER Z, 1994, P 8 C SEM 3 5 MAT, P305

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