Low temperature sintered ZnNb2O6 microwave dielectric ceramics doped with ZnO-V2O5 additions

被引：17

作者：

Wang, J ^{[1
]}

Yue, ZX ^{[1
]}

Gui, ZL ^{[1
]}

Ll, LT ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE | 2005年 / 40卷 / 24期

基金：

高等学校博士学科点专项科研基金;

关键词：

D O I：

10.1007/s10853-005-2639-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The low-temperature sintering of ZnNb2O6 ceramics by codoping with ZnO and V2O5 was investigated. The influence of these two additions on the microstructure and dielectric properties of ZnNb2O6 was also studied. It was found that this Zn compound ceramics codoped with ZnO and V2O5 could effectively lower the sintering temperature from 1150 °C of pure ZnNb 2O6 to below 950 °C. It was observed that 2ZnO.V 2O5-doped ZnNb2O6 ceramics have better dielectric properties than that of ZnO.V2O5-doped samples.

引用

页码：6581 / 6583

页数：3

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