Optical upconverter with integrated heterojunction phototransistor and light-emitting diode - art. no. 073501

被引:21
作者
Luo, H [1 ]
Ban, D [1 ]
Liu, HC [1 ]
Wasilewski, ZR [1 ]
Buchanan, M [1 ]
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
关键词
D O I
10.1063/1.2162685
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report an optical upconversion device that converts input 1.5 mu m light to output 0.87 mu m light with a built-in gain mechanism. The device consists of an InGaAs/InP heterojunction phototransistor (HPT) integrated with a GaAs/AlGaAs light-emitting diode (LED) by wafer fusion process. Incoming 1.5 mu m optical radiation is absorbed by the HPT, generating an amplified photocurrent. The resultant photocurrent drives the LED that emits at 0.87 mu m, which could be detected by a conventional silicon charge-coupled device. Upconversion is demonstrated at room temperature with a gain of 20 from the HPT and an overall external upconversion efficiency of 0.07 W/W.
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页数:3
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