An Efficient S-Band Doherty Power Amplifier Using Multi-state Integrated Matching

被引:1
作者
Xiong, Zhenting [1 ]
Wang, Jingying [2 ]
Chen, Jingxiong [1 ]
Wang, Hong [1 ,2 ,3 ]
机构
[1] South China Univ Technol, Engn Res Ctr Optoelect Guangdong Prov, Sch Elect & Informat Engn, Guangzhou 510640, Peoples R China
[2] South China Univ Technol, Sch Microelect, Guangdong Prov Engn Lab Wide Bandgap Semicond Mat, Guangzhou 510640, Peoples R China
[3] South China Univ Technol, Zhongshan Inst Modern Ind Technol, Guangzhou 510640, Peoples R China
关键词
Doherty power amplifier; Harmonic control; High efficiency; Multi-state; BANDWIDTH; DESIGN; LOAD;
D O I
10.1007/s00034-022-02173-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes a 3.2-3.8-GHz Doherty power amplifier with simultaneous harmonic control, dual impedance matching, and wideband operation using a multi-state integrated matching network (MIMN). The MIMN controls the second harmonic open and third harmonic short at the center frequency of the carrier amplifier, enabling the carrier amplifier to perform inverse F operation. Similarly, it regulates the second harmonic short in the upper and lower sidebands, resulting in a hybrid harmonic operation. The proposed DPA, based on Cree's two HEMT devices, achieves a saturation efficiency of 62.6-69.9%, a 6 dB back-off efficiency of 47.3-61.1%, and a maximum output power of 43.63 dBm over the entire frequency range of 3.2-3.8 GHz.
引用
收藏
页码:1818 / 1833
页数:16
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