Theory of 1/f noise currents in n+p diodes, n+p photodiodes, and Schottky diodes

被引:0
作者
Kim, JS [1 ]
Park, CH [1 ]
Min, HS [1 ]
Park, YJ [1 ]
机构
[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
来源
QUANTUM 1/F NOISE AND OTHER LOW FREQUENCY FLUCTUATIONS IN ELECTRONIC DEVICES | 1999年 / 466卷
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A formula is derived for short-circuit 1/f noise currents in one dimensional semiconductor devices. For n(+)p diodes; the formula shows that 1/f noise sources in the neutral p-region of the substrate give the dominant contribution to the terminal 1/f noise currents. For n+p photodiodes under illumination: the formula explains well why we have nonzero 1/f noise current at the forward bias where the net total de current of a photodiode is zero. For Schottky diodes, the formula shows that the major contribution to the terminal 1/f noise currents comes from the space-charge regions.
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页码:123 / 128
页数:6
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