Voltage-induced switching with long tolerance of voltage-pulse duration in a perpendicularly magnetized free layer

被引：14

作者：

Matsumoto, Rie ^{[1
]}

Sato, Tomoyuki ^{[1
,2
]}

Imamura, Hiroshi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[2] Chiba Inst Technol, Dept Elect & Elect Engn, Fac Engn, 2-17-1 Tsudanuma, Narashino, Chiba 2750016, Japan

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 05期

关键词：

ATOMIC LAYERS;

D O I：

10.7567/1882-0786/ab1349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The voltage-induced magnetization switching with the long tolerance of voltage-pulse duration (t(p)) is theoretically investigated. This method does not require the voltage-pulse to be turned off at around half-period of precessional motion of magnetization, and it can be realized by the energy dissipation through the damping torque. Numerical simulations show that this method is applicable in perpendicularly magnetized free layer at room temperature. The results provide a method for designing a voltage-controlled MRAM which ensures the reliability in writing against the distribution of t(p) from pulsed power supply and the distribution of precession periods among the MRAM cells. (c) 2019 The Japan Society of Applied Physics

引用

页数：4

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