Spin relaxation in GaAs/AlGaAs quantum wells in the vicinity of odd filling factors

被引：4
|
作者：
Shchepetilnikov, A. V. [1 ,2 ]
Nefyodov, Yu. A. [1 ]
Kukushkin, I. V. [1 ]
机构：
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia
[2] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia
来源：
JETP LETTERS | 2013年 / 97卷 / 10期
基金：
俄罗斯基础研究基金会;
关键词：
ELECTRONS; RESONANCE;
D O I：
10.1134/S002136401310010X
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Electron spin resonance in GaAs/AlGaAs quantum wells in the vicinity of odd filling factors nu = 3, 5, and 7 is investigated. The spin relaxation time of two-dimensional electrons is determined from the width of the microwave resonance absorption line. Dependences of the spin relaxation time on the filling factor, temperature, and orientation of the magnetic field are investigated. The spin relaxation time decreases noticeably upon deviation from odd filling factors, and its maximum value depends on the angle between the magnetic field and the plane of the two-dimensional electron gas.
引用
收藏
页码：574 / 578
页数：5
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