Lead chalcogenide VECSEL on Si emitting at 5 μm

被引：8

作者：

Rahim, M. ^{[1
]}

Felder, F. ^{[1
]}

Fill, M. ^{[1
]}

Boye, D. ^{[1
]}

Zogg, H. ^{[1
]}

机构：

[1] ETH, Thin Film Phys Grp, Switzerland Technopk Str 1, CH-8005 Zurich, Switzerland

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 25期

关键词：

D O I：

10.1049/el:20082500

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A mid-infrared vertical external cavity surface emitting laser (VECSEL) on a Si substrate has been realised. It is optically pumped and emits around 5 mm wavelength. Maximum output power of 26 mWp (limited by the 1.5 mu m wavelength pump laser) was observed at 100 K operating temperature with 3 mu s pulse widths. The active part is just a 1.3 mu m-thick PbTe layer.

引用

页码：1467 / +

页数：2

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