Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8μm

被引：111

作者：

Muneeb, M. ^{[1
,2
,3
]}

Chen, X. ^{[4
]}

Verheyen, P.

Lepage, G.

Pathak, S. ^{[1
]}

Ryckeboer, E. ^{[1
,2
]}

Malik, A. ^{[1
,2
]}

Kuyken, B. ^{[1
,2
]}

Nedeljkovic, M. ^{[4
]}

Van Campenhout, J.

Mashanovich, G. Z. ^{[4
]}

Roelkens, G. ^{[1
,2
]}

机构：

[1] Ghent Univ IMEC, Dept Informat Technol, Photon Res Grp, B-9000 Ghent, Belgium

[2] Univ Ghent, Ctr Nano & Biophoton NB Photon, B-9000 Ghent, Belgium

[3] Eindhoven Univ Technol, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands

[4] Univ Southampton, Optoelect Res Ctr, Fac Phys & Appl Sci, Southampton SO9 5NH, Hants, England

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

WAVE-GUIDES;

D O I：

10.1364/OE.21.011659

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8 mu m is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm. (C) 2013 Optical Society of America

引用

收藏

页码：11659 / 11669

页数：11

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