Enhanced phonon scattering by mass and strain field fluctuations in Nb substituted FeVSb half-Heusler thermoelectric materials

被引：90
作者：
Fu, Chenguang [1 ]
Xie, Hanhui [1 ]
Zhu, T. J. [1 ,2 ]
Xie, Jian [1 ,3 ]
Zhao, X. B. [1 ,3 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Zhejiang, Peoples R China
[3] Zhejiang Univ, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Hangzhou 310027, Zhejiang, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 12期
关键词：
ELECTRICAL-TRANSPORT PROPERTIES; LATTICE THERMAL-CONDUCTIVITY; HIGH TEMPERATURES; SEMICONDUCTOR; PERFORMANCE; ALLOYS; ZRNISN; BAND;
D O I：
10.1063/1.4772605
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The substitution of V by Nb in FeV1-xNbxSb (x = 0, 0.1, 0.2, 0.3, and 0.4) half-Heusler thermoelectric materials was introduced to lower the lattice thermal conductivity by the alloy scattering. A significantly reduced thermal conductivity of similar to 5.5 W m(-1) K-1 for the FeV0.6Nb0.4Sb was obtained at room temperature, a decrease of similar to 55% compared with that of FeVSb. The disorder scattering parameters of mass fluctuation Gamma(m) and strain field fluctuation Gamma(s) were calculated to explore the dominant factors for the enhanced phonon scattering. The obtained Gamma(m) was comparable to the Gamma(s). Therefore, the reduction of thermal conductivity in Nb substituted FeVSb compounds was attributed to both the mass and the strain field fluctuations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772605]
引用
收藏
页数：5
相关论文
共 33 条
[21]   Complex thermoelectric materials [J].
Snyder, G. Jeffrey ;
Toberer, Eric S. .
NATURE MATERIALS, 2008, 7 (02) :105-114
[22]   Crystal structure, electrical transport properties and electronic structure of the VFe1-xCuxSb solid solution [J].
Stadnyk, Y ;
Horyn, A ;
Sechovsky, V ;
Romaka, L ;
Mudryk, Y ;
Tobola, J ;
Stopa, T ;
Kaprzyk, S ;
Kolomiets, A .
JOURNAL OF ALLOYS AND COMPOUNDS, 2005, 402 (1-2) :30-35
[23]   Thermoelectric materials - Holey and unholey semiconductors [J].
Tritt, TM .
SCIENCE, 1999, 283 (5403) :804-805
[24]   Increased electrical conductivity in fine-grained (Zr,Hf)NiSn based thermoelectric materials with nanoscale precipitates [J].
Xie, Han-Hui ;
Yu, Cui ;
Zhu, Tie-Jun ;
Fu, Chen-Guang ;
Snyder, G. Jeffrey ;
Zhao, Xin-Bing .
APPLIED PHYSICS LETTERS, 2012, 100 (25)
[25]   Interrelation between atomic switching disorder and thermoelectric properties of ZrNiSn half-Heusler compounds [J].
Xie, Han-Hui ;
Mi, Jian-Li ;
Hu, Li-Peng ;
Lock, Nina ;
Chirstensen, Mogens ;
Fu, Chen-Guang ;
Iversen, Bo Brummerstedt ;
Zhao, Xin-Bing ;
Zhu, Tie-Jun .
CRYSTENGCOMM, 2012, 14 (13) :4467-4471
[26]   Enhanced Thermoelectric Figure of Merit of p-Type Half-Heuslers [J].
Yan, Xiao ;
Joshi, Giri ;
Liu, Weishu ;
Lan, Yucheng ;
Wang, Hui ;
Lee, Sangyeop ;
Simonson, J. W. ;
Poon, S. J. ;
Tritt, T. M. ;
Chen, Gang ;
Ren, Z. F. .
NANO LETTERS, 2011, 11 (02) :556-560
[27]   Strain field fluctuation effects on lattice thermal conductivity of ZrNiSn-based thermoelectric compounds [J].
Yang, J ;
Meisner, GP ;
Chen, L .
APPLIED PHYSICS LETTERS, 2004, 85 (07) :1140-1142
[28]   Evaluation of Half-Heusler Compounds as Thermoelectric Materials Based on the Calculated Electrical Transport Properties [J].
Yang, Jiong ;
Li, Huanming ;
Wu, Ting ;
Zhang, Wenqing ;
Chen, Lidong ;
Yang, Jihui .
ADVANCED FUNCTIONAL MATERIALS, 2008, 18 (19) :2880-2888
[29]   Thermoelectric properties of pure and doped FeMSb (M=V,Nb) [J].
Young, DP ;
Khalifah, P ;
Cava, RJ ;
Ramirez, AP .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :317-321
[30]   High-performance half-Heusler thermoelectric materials Hf1-x ZrxNiSn1-ySby prepared by levitation melting and spark plasma sintering [J].
Yu, Cui ;
Zhu, Tie-Jun ;
Shi, Rui-Zhi ;
Zhang, Yun ;
Zhao, Xin-Bing ;
He, Jian .
ACTA MATERIALIA, 2009, 57 (09) :2757-2764
1234