Enhanced phonon scattering by mass and strain field fluctuations in Nb substituted FeVSb half-Heusler thermoelectric materials

被引：90

作者：

Fu, Chenguang ^{[1
]}

Xie, Hanhui ^{[1
]}

Zhu, T. J. ^{[1
,2
]}

Xie, Jian ^{[1
,3
]}

Zhao, X. B. ^{[1
,3
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Zhejiang, Peoples R China

[3] Zhejiang Univ, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Hangzhou 310027, Zhejiang, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 12期

关键词：

ELECTRICAL-TRANSPORT PROPERTIES; LATTICE THERMAL-CONDUCTIVITY; HIGH TEMPERATURES; SEMICONDUCTOR; PERFORMANCE; ALLOYS; ZRNISN; BAND;

D O I：

10.1063/1.4772605

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The substitution of V by Nb in FeV1-xNbxSb (x = 0, 0.1, 0.2, 0.3, and 0.4) half-Heusler thermoelectric materials was introduced to lower the lattice thermal conductivity by the alloy scattering. A significantly reduced thermal conductivity of similar to 5.5 W m(-1) K-1 for the FeV0.6Nb0.4Sb was obtained at room temperature, a decrease of similar to 55% compared with that of FeVSb. The disorder scattering parameters of mass fluctuation Gamma(m) and strain field fluctuation Gamma(s) were calculated to explore the dominant factors for the enhanced phonon scattering. The obtained Gamma(m) was comparable to the Gamma(s). Therefore, the reduction of thermal conductivity in Nb substituted FeVSb compounds was attributed to both the mass and the strain field fluctuations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772605]

引用

页数：5

共 33 条

[1] LATTICE THERMAL CONDUCTIVITY OF DISORDERED SEMICONDUCTOR ALLOYS AT HIGH TEMPERATURES [J].