Superluminescent diodes using quantum dots superlattice

被引：13

作者：

Dimas, CE ^{[1
]}

Djie, HS ^{[1
]}

Ooi, BS ^{[1
]}

机构：

[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 288卷 / 01期

关键词：

quantum dot; superluminescent diodes; III-V materials;

D O I：

10.1016/j.jcrysgro.2005.12.043

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report a broadband superluminescence diode using InGaAs/GaAs self-assembled quantum dots structure grown by atomic layer molecular beam epitaxy. This two-section SLD consists of weakly guided-rib-waveguide gain section (4 mu m wide) butt-connected to a broad-area photon absorber (50 mu m wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces a low ripple spectrum (< 0.3 dB) with a spectral bandwidth of 135 nm at a peak wavelength of 1210 nm under continuous wave operation (20 degrees C) at 105 mA current injection. (c) 2005 Published by Elsevier B.V.

引用

页码：153 / 156

页数：4

共 7 条

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