共 7 条
Superluminescent diodes using quantum dots superlattice
被引:13
作者:

Dimas, CE
论文数: 0 引用数: 0
h-index: 0
机构:
Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA

Djie, HS
论文数: 0 引用数: 0
h-index: 0
机构:
Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA

Ooi, BS
论文数: 0 引用数: 0
h-index: 0
机构:
Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA
机构:
[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA
关键词:
quantum dot;
superluminescent diodes;
III-V materials;
D O I:
10.1016/j.jcrysgro.2005.12.043
中图分类号:
O7 [晶体学];
学科分类号:
0702 ;
070205 ;
0703 ;
080501 ;
摘要:
We report a broadband superluminescence diode using InGaAs/GaAs self-assembled quantum dots structure grown by atomic layer molecular beam epitaxy. This two-section SLD consists of weakly guided-rib-waveguide gain section (4 mu m wide) butt-connected to a broad-area photon absorber (50 mu m wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces a low ripple spectrum (< 0.3 dB) with a spectral bandwidth of 135 nm at a peak wavelength of 1210 nm under continuous wave operation (20 degrees C) at 105 mA current injection. (c) 2005 Published by Elsevier B.V.
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页码:153 / 156
页数:4
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