Enhanced optical properties of InGaN MQWs with InGaN underlying layers

被引：29
作者：
Son, JK
Lee, SN
Sakong, T
Paek, HS
Nam, O
Park, Y
Hwang, JS
Kim, JY
Cho, YH
机构：
[1] Samsung Adv Inst Technol, Photon Program Team, Suwon 440600, South Korea
[2] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
[3] Chungbuk Natl Univ, Inst Basic Sci Res, Cheongju 361763, South Korea
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 287卷 / 02期
关键词：
metalorganic chemical vapor deposition; nitrides;
D O I：
10.1016/j.jcrysgro.2005.10.071
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The influence of an InGaN underlying layer under InGaN multiquantum wells (MQWs) on the optical properties was investigated. Two MQW structures with and without underlying layers were prepared by MOCVD on sapphire substrates. Optical properties were characterized by means of temperature-dependent photoluminescence (PL), PL excitation (PLE), space-resolved micro-PL (P-PL) and time-resolved PL (TRPL) measurements. From the micro-PL mapping and temperature-dependent PL results, a more uniform emission distribution and an internal quantum efficiency of about 45% have been achieved with an InGaN layer below the MQWs. We observed an enhancement of both PL intensity and lifetime at room temperature for the InGaN MQWs grown on an InGaN underlying layer, compared to the InGaN MQWs without InGaN underlying layer. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：558 / 561
页数：4
相关论文
共 9 条
  • [1] High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers
    Akasaka, T
    Gotoh, H
    Saito, T
    Makimoto, T
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (15) : 3089 - 3091
  • [2] [Anonymous], 1997, BLUE LASER DIODE GAN, DOI DOI 10.1007/978-3-662-03462-0
  • [3] Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
    Cheng, YC
    Wu, CM
    Chen, MK
    Yang, CC
    Feng, ZC
    Li, GA
    Yang, JR
    Rosenauer, A
    Ma, KJ
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (26) : 5422 - 5424
  • [4] Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
    Chichibu, SF
    Uedono, A
    Onuma, T
    Sota, T
    Haskell, BA
    DenBaars, SP
    Speck, JS
    Nakamura, S
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (02) : 021914 - 1
  • [5] Cho YH, 2004, J KOREAN PHYS SOC, V44, pL792
  • [6] NAGAHAMA S, 2005, SPIE P, V5738, P57
  • [7] Characteristics of GaN-based laser diodes for post-DVD applications
    Nam, OH
    Ha, KH
    Kwak, JS
    Lee, SN
    Choi, KK
    Chang, TH
    Chae, SH
    Lee, WS
    Sung, YJ
    Paek, HS
    Chae, JH
    Sakong, T
    Son, JK
    Ryu, HY
    Kim, YH
    Park, Y
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2004, 201 (12): : 2717 - 2720
  • [8] RYU HY, 2005, SPIE P, V5738, P238
  • [9] TAKEYA M, 2005, SPIE P, V5738, P63
1