Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors

被引：57

作者：

Rieh, JS ^{[1
]}

Greenberg, D ^{[1
]}

Jagannathan, B ^{[1
]}

Freeman, G ^{[1
]}

Subbanna, S ^{[1
]}

机构：

[1] IBM Corp, Commun R&D Ctr, Hopewell Jct, NY 12533 USA

来源：

2001 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2001年

关键词：

D O I：

10.1109/SMIC.2001.942350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal resistance has been measured for high speed SiGe HBT's with various emitter widths and lengths. The smaller devices exhibited higher thermal resistance values, but eventually resulted in lower junction temperature rise for a given power density. A physical model has been developed which showed a good agreement with the measurement. The model indicates that the thermal resistance depends strongly on the deep trench geometry. The thermal resistance is also anticipated to increase with the existence of adjacent devices due to a heat dissipation interference, according to the model.

引用

页码：110 / 113

页数：4

共 8 条

[1]

ADLERSTEIN MG, 1991, IEEE T ELECTRON DEV, V38, P1533

[2] ELECTRICAL MEASUREMENT OF THE JUNCTION TEMPERATURE OF AN RF POWER TRANSISTOR [J].