DBR lasers emitting at 1060 nm with first-order grating in (InGa)P waveguide layer

被引：7
作者：
Hofmann, L
Klehr, A
Knauer, A
Smirnitski, VB
Stolz, W
机构：
[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany
[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 11期
关键词：
D O I：
10.1049/el:19990631
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The realisation of DBR diode lasers with a first-order grating fabricated by holographic lithography in an (InGa)P waveguide layer is described for the first time. The lasers show excellent characteristics with a threshold current density of 100A/cm(2) and a CW output power of 75mW at 25 degrees C.
引用
收藏
页码：902 / 903
页数：2
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