Comprehensive study of a 4H-SiC MES-MOSFET

被引：25

作者：

Mahabadi, S. E. Jamali ^{[1
]}

Moghadam, Hamid Amini ^{[2
]}

机构：

[1] Univ Maryland Baltimore Cty, Comp Sci & Elect Engn Dept, Baltimore, MD 21228 USA

[2] Griffith Univ, Queensland Micro & Nanotechnol Ctr, Nathan, Qld 4111, Australia

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2015年 / 74卷

关键词：

MOSFET; MESFET; Breakdown voltage; Two dimensional simulations; PARTIAL-SOI-LDMOSFET; BREAKDOWN-VOLTAGE; AVALANCHE-BREAKDOWN; ELECTRIC-FIELD; RESURF LDMOS; DEVICE; TRANSISTORS; LAYER; OXIDE; SEMICONDUCTOR;

D O I：

10.1016/j.physe.2015.06.019

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, we studied the enhancement of the breakdown voltage in the 4H-SiC MESFET-MOSFET (MES-MOSFET) structure which we have proposed in our previous work. We compared this structure with Conventional Bulk-MOSFET (CB-MOSFET) and Field plated Conventional Bulk-MOSFET (FCB-MOSFET) structures. The 4H-SiC MES-MOSFET structure consists of two additional schottky buried gates which behave like a Metal on Semiconductor (MES) at the interface of the active region and substrate. The motivation for this structure was to enhance the breakdown voltage by introducing a new technique of utilizing the reduced surface field (RESURF) concept. In our comparison and investigation we used a two-dimensional device simulator. Our simulation results show that the breakdown voltage of the proposed structure is 3.7 and 2.9 times larger than CB-MOSFET and FCB-MOSFET structures, respectively. We also showed that the threshold voltage and the slope of drain current (ID) as a function of drain-source voltage (V-DS) for all the structures is the same. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：25 / 29

页数：5

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