Low-power Low-noise inductorless Front-end for IoT applications

被引：0
|
作者：
Yang, Yu-Chu [1 ]
Yang, Jeng-Rern [1 ]
机构：
[1] Yuan Ze Univ, Dept Commun Engn, Jhongli, Taoyuan County, Taiwan
来源：
2017 6TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE) | 2017年
关键词：
CMOS; receiver front-ends; mixers; LNA; low-power receivers; inductorless; active balun; bulk injection; subthreshold; BULK-INJECTION; LOW-VOLTAGE; BAND;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a 900 M low-power, low-noise receiver frontend implemented using TSMC 0.18-mu m CMOS technology. The inductorless frontend comprises a low-noise amplifier (LNA) using bulk injection, a mixer, and an active balun operating in the subthreshold region. The front end achieves a conversion gain of 33.7 dB, and a 2.9 dB single sideband noise figure. The chip consumes 5.9 mA from a 0.9-V supply. The front end was simulated and fabricated using the TSMC 1P6M 0.18 mu m CMOS process.
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页数：3
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