Manipulating the spin states in a double molecular magnets tunneling junction
被引:8
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作者:
Jiang, Liang
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机构:
Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
Jiang, Liang
[1
,2
]
Liu, Xi
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h-index: 0
机构:
Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
Liu, Xi
[1
,2
]
Zhang, Zhengzhong
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机构:
Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China
Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
Zhang, Zhengzhong
[1
,2
,3
]
Wang, Ruiqiang
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机构:
S China Normal Univ, Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
Wang, Ruiqiang
[4
]
机构:
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China
[3] Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R China
[4] S China Normal Univ, Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China
Single molecular magnet;
Spin-transfer torque;
Hysteresis loop;
MAGNETIZATION;
D O I:
10.1016/j.physleta.2013.11.039
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
We theoretically explore the spin transport through nano-structures consisting of two serially coupled single-molecular magnets (SMM) sandwiched between two nonmagnetic electrodes. We find that the magnetization of SMM can be controlled by the spin transfer torque with respect to the bias voltage direction, and the electron current can be switched on/off in different magnetic structures. Such a manipulation is performed by full electrical manner, and needs neither external magnetic field nor ferromagnetic electrodes in the tunneling junction. The proposal device scheme can be realized with the use of the present technology [6] and has potential applications in molecular spintronics or quantum information processing. (C) 2013 Elsevier B.V. All rights reserved.