Effect of antimony addition on the thermal and electrical-switching behavior of bulk Se-Te glasses

被引:30
作者
Prashanth, S. B. Bhanu [1 ]
Asokan, S. [1 ]
机构
[1] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India
关键词
Chalcogenides; Calorimetry; Structural relaxation; CHALCOGENIDE GLASSES; STRUCTURAL TRANSFORMATIONS; RANGE ORDER; THRESHOLD; MEMORY; TRANSITION; GE; RELAXATION; PHASE; CRYSTALLIZATION;
D O I
10.1016/j.jnoncrysol.2008.11.003
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The thermal properties and electrical-switching behavior of semiconducting chalcogenide SbxSe55-xTe45 (2 <= x <= 9) glasses have been investigated by alternating differential scanning calorimetry and electrical-switching experiments, respectively. The addition of Sb is found to enhance the glass forming tendency and stability as revealed by the decrease in non-reversing enthalpy Delta H-nr. and an increase in the glass-transition width Delta T-g. Further, the glass-transition temperature of SbxSe55-xTe45 glasses, which is a measure of network connectivity, exhibits a subtle increase, suggesting a meager network growth with the addition of Sb. The crystallization temperature is also observed to increase with Sb content. The SbxSe55-xTe45 glasses (2 <= x <= 9) are found to exhibit memory type of electrical switching, which can be attributed to the polymeric nature of network and high devitrifying ability. The metallicity factor has been found to dominate over the network connectivity and rigidity in the compositional dependence of switching voltage. which shows a profound decrease with the addition of Sb. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:164 / 168
页数:5
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