High Temperature Thermoelectric Properties of Strontium Titanate Thin Films with Oxygen Vacancy and Niobium Doping

被引：47

作者：

Kumar, S. R. Sarath ^{[1
]}

Barasheed, Abeer Z. ^{[1
]}

Alshareef, H. N. ^{[1
]}

机构：

[1] King Abdullah Univ Sci & Technol, Thuwal 239556900, Saudi Arabia

来源：

ACS APPLIED MATERIALS & INTERFACES | 2013年 / 5卷 / 15期

关键词：

thermoelectrics; oxide semiconductors; transport properties; pulsed laser deposition; oxygen vacancies; DOPED SRTIO3; TRANSPORT;

D O I：

10.1021/am4015956

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H-2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m(-1) K-1, and the estimated figure of merit is 0.29 at 1000 K.

引用

页码：7268 / 7273

页数：6

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