Predicted electronic properties of zinc-blende Zn1-xMgxSe alloys

被引：12

作者：

Charifi, Z ^{[1
]}

Baaziz, H ^{[1
]}

Bouarissa, N ^{[1
]}

机构：

[1] Univ Msila, Fac Sci & Engn, Dept Phys, Msila 28000, Algeria

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2004年 / 84卷 / 2-3期

关键词：

zinc-blende; electronic properties; VCA;

D O I：

10.1016/S0254-0584(03)00377-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based on the pseudopotential scheme, the electronic properties of zinc-blende Zn1-xMgxSe alloys have been predicted. The agreement between our calculated electronic band parameters and the available experimental data is. generally reasonable. These parameters are found to depend non-linearly on alloy composition x. The electron valence and conduction charge densities derived from pseudopotential calculations for certain concentrations are also reported. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：273 / 278

页数：6

共 20 条

[1] Electronic band parameters for zinc-blende Al1-xGaxN [J].

Bhouri, A ;

Ben Zid, F ;

Mejri, H ;

Ben Fredj, A ;

Bouarissa, N ;

Said, M .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (29) :7017-7026

[2] The behaviour of electron valence and conduction charge densities in InP under pressure [J].

Bouarissa, N .

MATERIALS CHEMISTRY AND PHYSICS, 2000, 65 (01) :107-112

[3] Effects of compositional disorder upon electronic and lattice properties of GaxIn1-xAs [J].

Bouarissa, N .

PHYSICS LETTERS A, 1998, 245 (3-4) :285-291

[4] Electron valence charge densities in Hg1-xCdxTe mixed crystals [J].

Bouarissa, N .

INFRARED PHYSICS & TECHNOLOGY, 1998, 39 (05) :265-270

[5] VALENCE-BAND AND CONDUCTION-BAND DENSITIES OF STATES FOR TETRAHEDRAL SEMICONDUCTORS - THEORY AND EXPERIMENT [J].

CHELIKOWSKY, JR ;

WAGENER, TJ ;

WEAVER, JH ;

JIN, A .

PHYSICAL REVIEW B, 1989, 40 (14) :9644-9651

[6] INVESTIGATION OF BAND MASSES AND G VALUES OF ZNSE BY 2-PHOTON MAGNETOABSORPTION [J].

HOLSCHER, HW ;

NOTHE, A ;

UIHLEIN, C .

PHYSICAL REVIEW B, 1985, 31 (04) :2379-2387

[7] E(0) band-gap energy and lattice constant of ternary Zn1-xMgxSe as functions of composition [J].

Jobst, B ;

Hommel, D ;

Lunz, U ;

Gerhard, T ;

Landwehr, G .

APPLIED PHYSICS LETTERS, 1996, 69 (01) :97-99

[8] Composition and temperature dependence of electron band structure in ZnSe1-xSx [J].

Kassali, K ;

Bouarissa, N .

MATERIALS CHEMISTRY AND PHYSICS, 2002, 76 (03) :255-261

[9]

Kobayasi T., 1993, B COLL MED SCI TOHOK, V2, P7

[10] BAND-STRUCTURE OF TERNARY COMPOUND SEMICONDUCTORS BEYOND THE VIRTUAL CRYSTAL APPROXIMATION [J].

LEE, SJ ;

KWON, TS ;

NAHM, K ;

KIM, CK .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (14) :3253-3257

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