Fabrication of Simple GaAs Solar Cell by Zn Diffusion Method

We reported the spin-on Zincsilicafilm dopant content of the diffusion process and the formation of the p(+) layer were applied to fabricate GaAs solar cells and their characteristics were investigated. The p-n junction was formed by a thermal furnace from the diffusion of zinc into the GaAs substrate. It was found that the GaAs substrate must be covered by a 100-nm-thick SiO2 layer. This reduced the damage to the GaAs substrate surface morphology that occurred during high temperature treatment and made the cleaning of the residual solvate on the surface easier.