Physical And Electrical Properties Of Copper Oxide Doped Bismuth Borate Glasses

被引：2

作者：

Dhiman, R. L. ^{[1
]}

Kundu, Virender Singh ^{[2
]}

Arora, Susheel ^{[3
]}

Maan, A. S. ^{[3
]}

机构：

[1] SD Coll, PG Dept Appl Phys, Ambala 133001, India

[2] Kurukshetra Univ, Dept Elect Sci, Kurukshetra 136119, Haryana, India

[3] Maharshi Dayanand Univ, Dept Phys, Rohtak 124001, Haryana, India

来源：

PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013) | 2013年 / 1536卷

关键词：

Semiconducting oxide glasses; Electrical conductivity;

D O I：

10.1063/1.4810412

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The role of CuO on the physical and electrical properties in x CuO (center dot)(25-x) Bi2O3 center dot 75 B2O3; (5 <= x <= 20) glass system has been investigated. The glasses were prepared by normal melt quench technique. The density and molar volume of the glasses decreases with increase in CuO (mol %). The de conductivity was measured in the temperature range 413-513 K. The conduction mechanism in these glasses was discussed in terms of small polaron hopping (SPH) theory proposed by Mott. The activation energy is found to decrease with increasing copper oxide content. The de conductivity increases with increase in CuO content and ranging from 6.02x10(-12) (Omega m)(-1) to 1.096x10(-10) (Omega m)(-1) at 450K.

引用

页码：685 / +

页数：2