Characterization of grain boundary impedances in fine- and coarse-grained CaCu3Ti4O12 ceramics -: art. no. 094124

被引：481

作者：

Adams, TB ^{[1
]}

Sinclair, DC ^{[1
]}

West, AR ^{[1
]}

机构：

[1] Univ Sheffield, Dept Mat Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.73.094124

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of electrode material, dc bias, and pellet thickness on the electrical properties of fine- and coarse-grained CaCu3Ti4O12 (CCTO) ceramics has been investigated using impedance spectroscopy. The low frequency arc observed in Z(*) plots near room temperature is independent of the electron work function of the metal electrode. It shows significant variation with dc bias and pellet thickness for coarse-grained ceramics, but no such variations for fine-grained ceramics. The results demonstrate the importance of ceramic microstructure in controlling the electrical properties of CCTO ceramics and support the internal barrier layer capacitor (IBLC) model of Schottky barriers at the grain boundaries between semiconducting grains. The IBLC model explains the high permittivity and nonlinear current-voltage characteristics commonly reported for CCTO ceramics.

引用

页数：9

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