Atomic mechanisms of grain boundary motion

被引:80
作者
Suzuki, A [1 ]
Mishin, Y [1 ]
机构
[1] George Mason Univ, Sch Computat Sci, Fairfax, VA 22030 USA
来源
NEW FRONTIERS OF PROCESSING AND ENGINEERING IN ADVANCED MATERIALS | 2005年 / 502卷
关键词
grain boundary migration; grain boundary dislocations; molecular dynamics simulation;
D O I
10.4028/www.scientific.net/MSF.502.157
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present results of atomistic computer simulations of spontaneous and stress-induced grain boundary (GB) migration in copper. Several symmetrical tilt GBs have been studied using the embedded-atom method and molecular dynamics. The GBs are observed to spontaneously migrate in a random manner. This spontaneous GB motion is always accompanied by relative translations of the grains parallel to the GB plane. Furthermore, external shear stresses applied parallel to the GB and normal to the tilt axis induce GB migration. Strong coupling is observed between the normal GB velocity v(n) and the grain translation rate v(parallel to). The mechanism of GB motion is established to be local lattice rotation within the GB core that does not involve any GB diffusion or sliding. The coupling constant between v(n) and v(parallel to) predicted within a simple geometric model accurately matches the molecular dynamics observations.
引用
收藏
页码:157 / 162
页数:6
相关论文
共 11 条
[1]  
[Anonymous], RECOVERY RECRYSTALLI
[2]   A unified approach to motion of grain boundaries, relative tangential translation along grain boundaries, and grain rotation [J].
Cahn, JW ;
Taylor, JE .
ACTA MATERIALIA, 2004, 52 (16) :4887-4898
[3]  
CAHN JW, 2004, IN PRESS MAT SCI E A
[4]   STRESS-INDUCED MOVEMENT OF CRYSTAL BOUNDARIES [J].
LI, CH ;
EDWARDS, EH ;
WASHBURN, J ;
PARKER, ER .
ACTA METALLURGICA, 1953, 1 (02) :223-229
[5]   MOLECULAR-DYNAMICS STUDY OF LATTICE-DEFECT-NUCLEATED MELTING IN METALS USING AN EMBEDDED-ATOM-METHOD POTENTIAL [J].
LUTSKO, JF ;
WOLF, D ;
PHILLPOT, SR ;
YIP, S .
PHYSICAL REVIEW B, 1989, 40 (05) :2841-2855
[6]  
MISHIN Y, 2001, PHYS REV B, V68
[7]  
Srinivasan SG, 2002, SCIENCE AND TECHNOLOGY OF INTERFACES, P3
[8]  
SUTTON AP, 1995, INTERFACES CRYSTALLI, pCH9
[9]   Atomistic modeling of point defects and diffusion in copper grain boundaries [J].
Suzuki, A ;
Mishin, Y .
INTERFACE SCIENCE, 2003, 11 (01) :131-148
[10]   Atomistic simulation of curvature driven grain boundary migration [J].
Upmanyu, M ;
Smith, RW ;
Srolovitz, DJ .
INTERFACE SCIENCE, 1998, 6 (1-2) :41-58