Fully-Integrated, Power-Efficient Regulator and Bandgap Circuits for Wireless-Powered Biomedical Applications

被引:0
作者
Zargham, Meysam [1 ]
Gulak, P. Glenn [1 ]
机构
[1] Univ Toronto, Sch Elect & Comp Engn, Toronto, ON M5S 1A1, Canada
来源
2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012) | 2012年
关键词
LOW-DROPOUT REGULATOR;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Design and Measurement results are presented for a fully integrated, linear, low-dropout regulator with a quiescent current of 12 mu A. The regulator is able to recover from full load steps with less than 10% change in the regulated voltage and in less than 2 mu s. The regulator reference is generated by a curvature-compensated bandgap reference. The reference uses only 9.8 mu A and has a temperature coefficient of 2.95-ppm/degrees C and can tolerate a wide range of input voltages from 3.2V to 8V with a line regulation of 160 mu V/V. These blocks are fabricated in 0.13 mu m CMOS process, do not require off-chip components and target power harvesting biomedical and lab-on-a-chip applications that require up to 5mA of current from a 3.3V supply.
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页数:4
相关论文
共 14 条
[1]   A transient-enhanced low-quiescent current low-dropout regulator with buffer impedance attenuation [J].
Al-Shyoukh, Mohammad ;
Lee, Hoi ;
Perez, Raul .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (08) :1732-1742
[2]  
Gupta Vishal., 2007, 2007 IEEE International Solid-State Circuits Conference ISSCC, P520, DOI [10.1109/ISSCC.2007.373523, DOI 10.1109/ISSCC.2007.373523]
[3]   Design of low-voltage bandgap reference using transimpedance amplifier [J].
Jiang, YM ;
Lee, EKF .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2000, 47 (06) :552-555
[4]   CMOS Bandgap References With Self-Biased Symmetrically Matched Current-Voltage Mirror and Extension of Sub-1-V Design [J].
Lam, Yat-Hei ;
Ki, Wing-Hung .
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2010, 18 (06) :857-865
[5]   A capacitor-free CMOS low-dropout regulator with damping-factor-control frequency compensation [J].
Leung, KN ;
Mok, PKT .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (10) :1691-1702
[6]   A 2-V 23-μA 5.3-ppm/°C curvature-compensated CMOS bandgap voltage reference [J].
Leung, KN ;
Mok, PKT ;
Leung, CY .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (03) :561-564
[7]  
Lewis S. R., 1989, U.S. Patent, Patent No. 4808908
[8]   A 1.2-V Piecewise Curvature-Corrected Bandgap Reference in 0.5 μm CMOS Process [J].
Li, Jing-Hu ;
Zhang, Xing-bao ;
Yu, Ming-yan .
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2011, 19 (06) :1118-1122
[9]   A Sub-1 V, 26 μW, Low-Output-Impedance CMOS Bandgap Reference With a Low Dropout or Source Follower Mode [J].
Ng, David C. W. ;
Kwong, David K. K. ;
Wong, Ngai .
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2011, 19 (07) :1305-1309
[10]   A trimming-free CMOS bandgap-reference circuit with sub-1-V-supply voltage operation [J].
Okuda, Yuichi ;
Tsukamoto, Takayuki ;
Hiraki, Mitsuru ;
Horiguchi, Masashi ;
Ito, Takayasu .
2007 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2007, :96-97