Deposition of transparent AlN thin film on SiAlON substrate by reactive magnetron sputtering

被引：0

作者：

Shan, Yingchun ^{[1
]}

Zhu, Feng ^{[1
]}

Guan, Chunlong ^{[2
]}

Xu, Jiujun ^{[1
]}

Wang, Liang ^{[1
]}

Han, Xiaoguang ^{[1
]}

机构：

[1] Dalian Maritime Univ, Dept Mat Sci & Engn, Dalian 116026, Liaoning, Peoples R China

[2] Henan Univ Technol, Sch Mat Sci & Engn, Zhengzhou AH-450007, Peoples R China

来源：

FRONTIERS OF MANUFACTURING SCIENCE AND MEASURING TECHNOLOGY II, PTS 1 AND 2 | 2012年 / 503-504卷

基金：

中国国家自然科学基金;

关键词：

AlN thin film; SiAlON substrate; reactive magnetron sputtering; ALPHA-SIALON; ALUMINUM; AIN; GAN;

D O I：

10.4028/www.scientific.net/AMR.503-504.564

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminum nitride thin film has been deposited on transparent SiAlON substrate by reactive magnetron sputtering. X-ray photoelectron spectroscopy patterns and raman spectra were used to analysis the phase composition of the thin film, and the surface morphology of the thin film was observed by atomic force microscope, which reveal that AlN thin film with smooth surface and columniform microstructure was formed. The fourier transform infrared spectral of the SiAlON substrate and SiAlON/AlN composition structure indicate that the AlN thin film has high transmittance above 99%, it is to say that the AlN thin film is transparent, and it nearly have no affect on the infrared transmittance of the SiAlON substrate.

引用

页码：564 / +

页数：2

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