Phase identification of self-forming Cu-Mn based diffusion barriers on p-SiOC:H and SiO2 dielectrics using x-ray absorption fine structure

被引:46
作者
Ablett, J. M. [1 ]
Woicik, J. C. [2 ]
Tokei, Zs. [3 ]
List, S. [4 ]
Dimasi, E. [5 ]
机构
[1] Synchrotron Soleil, Lorme Merisiers, F-91192 Gif Sur Yvette, France
[2] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
[3] IMEC, B-3001 Louvain, Belgium
[4] Intel Assignee Semicond Res Org, Res Triangle Pk, NC 27709 USA
[5] Brookhaven Natl Lab, Natl Synchrotron Light Source, Upton, NY 11973 USA
关键词
copper alloys; diffusion barriers; manganese alloys; metallic thin films; porous materials; segregation; X-ray absorption spectra; MG ALLOY-FILMS; MASS-SPECTROMETRY; GRAIN-GROWTH; SEGREGATION; INTERCONNECTS; CONSTITUENTS;
D O I
10.1063/1.3068500
中图分类号
O59 [应用物理学];
学科分类号
摘要
X-ray absorption fine structure spectroscopy has been used to study the chemical and structural properties of self-forming diffusion barrier layers from Cu-8 at. % Mn alloy films on porous low-k and thermally grown SiO2 dielectrics. For the porous low-k/Cu(Mn) system, we provide evidence that the interface is composed of MnSiO3 and MnO with near complete Mn segregation from the alloy film; however, we find that the self-forming process does not go to full completion on thermally grown SiO2 substrates.
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页数:3
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