Phase identification of self-forming Cu-Mn based diffusion barriers on p-SiOC:H and SiO2 dielectrics using x-ray absorption fine structure

被引：46

作者：

Ablett, J. M. ^{[1
]}

Woicik, J. C. ^{[2
]}

Tokei, Zs. ^{[3
]}

List, S. ^{[4
]}

Dimasi, E. ^{[5
]}

机构：

[1] Synchrotron Soleil, Lorme Merisiers, F-91192 Gif Sur Yvette, France

[2] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[3] IMEC, B-3001 Louvain, Belgium

[4] Intel Assignee Semicond Res Org, Res Triangle Pk, NC 27709 USA

[5] Brookhaven Natl Lab, Natl Synchrotron Light Source, Upton, NY 11973 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期

关键词：

copper alloys; diffusion barriers; manganese alloys; metallic thin films; porous materials; segregation; X-ray absorption spectra; MG ALLOY-FILMS; MASS-SPECTROMETRY; GRAIN-GROWTH; SEGREGATION; INTERCONNECTS; CONSTITUENTS;

D O I：

10.1063/1.3068500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray absorption fine structure spectroscopy has been used to study the chemical and structural properties of self-forming diffusion barrier layers from Cu-8 at. % Mn alloy films on porous low-k and thermally grown SiO2 dielectrics. For the porous low-k/Cu(Mn) system, we provide evidence that the interface is composed of MnSiO3 and MnO with near complete Mn segregation from the alloy film; however, we find that the self-forming process does not go to full completion on thermally grown SiO2 substrates.

引用

页数：3

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