High-Responsivity Near-Infrared Photodetector Using Gate-Modulated Graphene/Germanium Schottky Junction

被引：62

作者：

Chang, Kyoung Eun ^{[1
]}

Kim, Cihyun ^{[1
]}

Yoo, Tae Jin ^{[1
]}

Kwon, Min Gyu ^{[1
]}

Heo, Sunwoo ^{[1
]}

Kim, So-Young ^{[1
]}

Hyun, Yujun ^{[2
]}

Yoo, Jung Il ^{[2
]}

Ko, Heung Cho ^{[2
]}

Lee, Byoung Hun ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Ctr Emerging Elect Devices & Syst, Sch Mat Sci & Engn, 123 Cheomdangwagi Ro, Gwangju 61005, South Korea

[2] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Flexible Elect Lab, 123 Cheomdangwagi Ro, Gwangju 61005, South Korea

来源：

ADVANCED ELECTRONIC MATERIALS | 2019年 / 5卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

graphene; germanium heterostructure photodetector; germanium hybrid photodetector; heterostructure; hybrid structure; photodetector; Schottky junction; BROAD-BAND; GROWN GRAPHENE; ULTRAHIGH;

D O I：

10.1002/aelm.201800957

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A high-responsivity near-infrared photodetector is demonstrated using a transparent ZnO top gate-modulated graphene/Ge Schottky junction. The responsivity of a graphene/Ge junction photodetector characterized with a scanning photocurrent microscopy system is improved to 0.75 A W-1. This result is 5 to 35 times higher than the previously reported graphene/Ge photodetectors that did not use gate modulation. The detectivity is also improved to 2.53 x 10(9) cm Hz(1/2) W-1 at V-g = -10 V from 0.43 x 10(9) cm Hz(1/2) W-1 at V-g = 0 V. The performance of this gate-modulated graphene/Ge Schottky junction base infrared (IR) detector is comparable to a commercially available IR photodetector, but the fabrication process is much simpler and compatible with glass or flexible substrates.

引用

页数：7

共 37 条

[1] Tunable Graphene-Silicon Heterojunctions for Ultrasensitive Photodetection [J].