Simulation of all-optical logic XNOR gate based on quantum-dot semiconductor optical amplifiers with amplified spontaneous emission

被引:31
作者
Kotb, A. [1 ,2 ]
Zoiros, K. E. [3 ]
机构
[1] Fayoum Univ, Fac Sci, Dept Phys, Al Fayyum 63514, Egypt
[2] Northern Borders Univ, Coll Sci, Dept Phys, Ar Ar 1321, Ksa, Saudi Arabia
[3] Democritus Univ Thrace, Dept Elect & Comp Engn, Sch Engn, Lightwave Commun Res Grp, GR-67100 Xanthi, Greece
关键词
Optical logic; XNOR gate; Quantum-dot; Semiconductor optical amplifier; Mach-Zehnder interferometer; MACH-ZEHNDER INTERFEROMETER; QD-SOA; THEORETICAL-ANALYSIS; DIFFERENTIAL SCHEME; XOR; PERFORMANCE; PROPOSAL; GBIT/S;
D O I
10.1007/s11082-013-9742-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The performance of all-optical logic XNOR gate has been simulated. XNOR operation is realized by using Mach-Zehnder interferometer utilizing semiconductor optical amplifiers (SOAs) with quantum-dot (QD) active region. The study is carried out when the amplified spontaneous emission (ASE) is included. Nonlinear dynamics including carrier heating and spectral hole-burning in the QD-SOA are taken into account together with the rate equations in order to realize the all-optical logic XNOR operation. Results show that the XNOR gate is capable of operating at data speed of 250 Gb/s with high output quality factor (-factor). The dependence of the output -factor on signals and QD-SOAs parameters is also investigated and discussed.
引用
收藏
页码:1213 / 1221
页数:9
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