Is graphene on copper doped?

被引：32

作者：

Marsden, Alexander J. ^{[1
]}

Asensio, Maria-Carmen ^{[2
]}

Avila, Jose ^{[2
]}

Dudin, Pavel ^{[3
]}

Barinov, Alexei ^{[3
]}

Moras, Paolo ^{[4
]}

Sheverdyaeva, Polina M. ^{[4
]}

White, Thomas W. ^{[5
]}

Maskery, Ian ^{[1
]}

Costantini, Giovanni ^{[5
]}

Wilson, Neil R. ^{[1
]}

Bell, Gavin R. ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Synchrotron Soleil, F-91192 Gif Sur Yvette, France

[3] Elettra Sincrotrone Trieste SCpA, I-34149 Trieste, Italy

[4] CNR, Ist Struttura Mat, Trieste, Italy

[5] Univ Warwick, Dept Chem, Coventry CV4 7AL, W Midlands, England

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

graphene; CVD; Cu; doping; band gap; Dirac cone; photoemission; nano-ARPES; EPITAXIAL GRAPHENE;

D O I：

10.1002/pssr.201307224

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Angle-resolved photoemission spectroscopy (ARPES) and X-ray photoemission spectroscopy have been used to characterise epitaxially ordered graphene grown on copper foil by low-pressure chemical vapour deposition. A short vacuum anneal to 200 degrees C allows observation of ordered low energy electron diffraction patterns. High quality Dirac cones are measured in ARPES with the Dirac point at the Fermi level (undoped graphene). Annealing above 300 degrees C produces n-type doping in the graphene with up to 350 meV shift in Fermi level, and opens a band gap of around 100 meV. (c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：643 / 646

页数：4

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