Comprehensive Study of the Performance of SiC MOSFET-Based Automotive DC-DC Converter Under the Influence of Parasitic Inductance

被引：72

作者：

Han, Di ^{[1
]}

Sarlioglu, Bulent ^{[1
]}

机构：

[1] Univ Wisconsin Madison, Wisconsin Elect Machines & Power Elect Consortium, Madison, WI 53706 USA

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2016年 / 52卷 / 06期

关键词：

Bidirectional dc-dc converter; electromagnetic interference (EMI); hybrid/electric vehicle; parasitic inductance; silicon carbide; SWITCHING LOSSES; POWER; INVERTER; DEVICES; EFFICIENCY; DESIGN; DIODE; IGBTS;

D O I：

10.1109/TIA.2016.2586463

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

With low loss, fast switching speed, and high-temperature capabilities, silicon carbide (SiC)-based devices are beneficial to automotive power converters in terms of efficiency increase and size reduction. Nevertheless, as a result of fast switching transitions and low on-state resistance of SiC devices, SiC-based converters are prone to overshoots and oscillations on switching waveforms, with the presence of parasitic inductances in the circuit. The overshoots and oscillations further contribute to increased converter loss and EMI emissions. This paper aims to study the influence of parasitic inductances on the performance of SiC MOSFETs for automotive dc-dc converters from the loss and electromagnetic interference perspective.

引用

页码：5100 / 5111

页数：12

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