Ligand engineering on CdTe quantum dots in perovskite solar cells for suppressed hysteresis

被引:51
作者
Xiao, Jia-Wen [1 ]
Ma, Sai [1 ]
Yu, Shijie [1 ]
Zhou, Chenxiao [1 ]
Liu, Pengfei [1 ]
Chen, Yihua [2 ]
Zhou, Huanping [2 ]
Li, Yujing [1 ]
Chen, Qi [1 ]
机构
[1] Beijing Inst Technol, Sch Mat Sci & Engn, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Beijing 100081, Peoples R China
[2] Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
Perovskite solar cells; CdTe; Quantum dots; Ligand exchange; Hysteresis; INTERFACE; HETEROJUNCTION; NANOCRYSTALS; TEMPERATURE; ELECTRON; MANAGEMENT; STABILITY;
D O I
10.1016/j.nanoen.2018.01.035
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Solar cells employing lead halide perovskites as light absorbers have been one hot topic in recent years due to their amazing device performance and commercialization potential. Yet, there exist challenges on the way to their practical use, including long-term stability, and J-V hysteresis. Herein, we demonstrate an improved contact between perovskite and hole transporting layer (HTL) by using CdTe quantum dots, wherein the capping ligands on quantum dots are systematically investigated. The devices with the CdTe quantum-dot-in-perovskite solids interlayer achieve a high efficiency (similar to 19.3%, averaged), and more importantly, a significantly reduced hysteresis, which is superior to devices with CdTe QDs capped by other ligands (PbI2, CH3NH3I, oleic acid). We attribute this superior device performance to the congeneric junction contact between perovskite and CdTe quantum-dot-in-perovskite layer. Furthermore, we reveal that the reduced hysteresis is partially contributed from faster hole extraction at the interface thanks to the high hole mobility in CdTe. These findings shed lights on the future design of quantum dots for perovskite optoelectronics in the perspective of ligand engineering.
引用
收藏
页码:45 / 53
页数:9
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