Electrical and thermoelectrical properties of Sb2Te3 prepared by the metal-organic chemical vapor deposition technique

The growth of Sb2Te3 thin films on an amorphous substrate by metalorganic chemical vapor deposition in a horizontal quartz reactor by using diethyltellerium as a precursor was studied. It was found that the growth kinetics were controlled only by the TESb partial pressure. As grown thin films, it was found that the deposited layers have a stoichiometric composition and present a preferential orientation but with the presence of a polycrystal phase. It was observed that the electrical and thermoelectrical properties depended on the VI/V ratio and the best value of mobility was found to be equal to 196 cm2/V·s for a ratio equal to 7. The decrease in carrier concentration with increasing VI/V is due to the cracking efficiency of the gases in the reactor.