An improved In0.5Ga0.5P/GaAs double heterostructure-emitter bipolar transistor using emitter edge-thinning technique

被引：25

作者：

Lin, YS ^{[1
]}

Wu, YH ^{[1
]}

Su, JS ^{[1
]}

Hsu, WC ^{[1
]}

Ho, SD ^{[1
]}

Lin, W ^{[1
]}

机构：

[1] CHUNG HWA TELECOMMUN LAB 12,TAYUAN,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 4A期

关键词：

emitter edge-thinning technique; LP-MOCVD; HBT; HEBT; DHEBT; Gummel plot;

D O I：

10.1143/JJAP.36.2007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An improved In0.5Ga0.5P/GaAs double heterostructure-emitter bipolar transistor (DHEBT) has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The 100 Angstrom undoped GaAs spacers grown on both sides of the base are used to improve the recombination of p-n interface and to increase the common-emitter current gain. The emitter edge-thinning technique is used to reduce the surface recombination current and improve the current gain. A current gain of 180 with an offset voltage as low as 60 mV are achieved. Meanwhile, Gummel plot is shown to understand the composition of collector and base currents.

引用

页码：2007 / 2009

页数：3

共 10 条

[1] EMITTER SIZE EFFECT ON CURRENT GAIN IN FULLY SELF-ALIGNED ALGAAS/GAAS HBTS WITH ALGAAS SURFACE PASSIVATION LAYER [J].