Thermoelectric Properties Of SiO2/SiO2+Au Nano-Layered Superlattices Modified By MeV Si Ions Beam

The efficiency of thermoelectric devices and materials is limited by the properties of n- and p-type (semi) conductors. Effective thermoelectric materials have a low thermal conductivity and a high electrical conductivity. The performance of thermoelectric materials and devices is shown by a dimensionless figure of merit, The performance of thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S-2 sigma T/K, where S is the Seebeck coefficient, sigma is the electrical conductivity, T is the absolute temperature and K is the thermal conductivity. ZT can be increased by both increasing S and. sigma or decreasing K. In this study we have prepared a thermoelectric generator from 100 alternating layers of SiO2/SiO2+Au superlattice films using ion beam assisted deposition (IBAD). In order to determine the stoichiometry of SiO2 and Au in the grown multilayer films, Rutherford Backscattering Spectrometry (RBS) was used. The 5 MeV Si ions bombardment was performed using the CIM Pelletron ion beam accelerator to make nanodots and/or nanoclusters in the multi-layer superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and increase the cross plane electrical conductivity.