Double layer structure of ZnO thin films deposited by RF-magnetron sputtering on glass substrate

被引:62
作者
Besleaga, C. [1 ]
Stan, G. E. [2 ]
Galca, A. C. [2 ]
Ion, L. [1 ]
Antohe, S. [1 ]
机构
[1] Univ Bucharest, Fac Phys, Bucharest 077125, Romania
[2] Natl Inst Mat Phys, Bucharest 077125, Romania
关键词
ZnO thin films; Magnetron sputtering; Interface; VRH mechanism; XRR; REFRACTIVE INDICES; TRANSPARENT; SAPPHIRE; GROWTH;
D O I
10.1016/j.apsusc.2012.05.097
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Transparent ZnO films are synthesized by RF-magnetron sputtering (1.78 MHz) onto glass substrates, using a mild-pressed ZnO powder target. The depositions were carried at three inert argon pressures (0.25 Pa, 0.30 Pa, and 0.45 Pa) at two substrate temperatures (100 degrees C and 400 degrees C). The role of the sputtering conditions on ZnO thin films nanostructuring, optical properties and morphology is investigated by Xray diffraction (XRD), X-ray reflectometry (XRR) and Spectroscopic ellipsometry (SE). XRD investigations revealed that ZnO films show a (0 0 l) texture with nanosized crystallites. Right-angle asymmetry of the (0 0 2) diffraction peak is observed. The peak profile analysis using pseudo-Voigt functions unveils a double overlapped peak structure with different coherent zone size values. A double layer structure is evidenced by analyzing the XRR data. Samples prepared at 0.3 Pa at a temperature of 400 degrees C have a similar to 4 nm bottom layer consisting of highly depleted in oxygen ZnO1-x structure, continued by a 53 nm top layer of textured ZnO. Electrical measurements show that the temperature dependence of the conductivity is well described by the Mott variable range hopping (VRH) law. The samples obtained at 400 degrees C have a significantly lower resistivity. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码:8819 / 8824
页数:6
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